BLF7G20L-90P,118 NXP Semiconductors, BLF7G20L-90P,118 Datasheet - Page 4

• Manufacturer Part Number: BLF7G20L-90P,118
• Description: TRANSISTOR PWR LDMOS ACC-4L
• Manufacturer: NXP Semiconductors

Specifications of BLF7G20L-90P,118

• Transistor Type: LDMOS
• Frequency: 1.81GHz ~ 1.88GHz
• Gain: 19dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Current - Test: 550mA
• Voltage - Test: 28V
• Power - Output: 84W
• Package / Case: SOT-1121A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934064087118

NXP Semiconductors
BLF7G20L-90P_7G20LS-90P_1
Product data sheet
Fig 2. Two-tone CW power gain and drain efficiency
(dB)
G
p
22
21
20
19
18
17
16
15
as function of load power; typical values
0
V
f
2
DS
= 1880.05 MHz.
G
η
D
p
= 28 V; I
10
7.2 One-tone CW
7.3 Two-tone CW
20
Dq
= 550 mA; f
Fig 1. One-tone CW power gain and drain efficiency as function of load power;
30
40
typical values
1
V
= 1879.95 MHz;
DS
50
= 28 V; I
All information provided in this document is subject to legal disclaimers.
P
L
001aal868
60
(W)
BLF7G20L-90P; BLF7G20LS-90P
Dq
(dB)
G
= 550 mA; f = 1880 MHz.
70
p
Rev. 01 — 28 April 2010
22
21
20
19
18
17
16
15
70
60
50
40
30
20
10
0
(%)
0
η
D
G
η
D
p
20
Fig 3. Two-tone CW intermodulation distortion as a
(dBc)
IMD
−20
−40
−60
−80
40
0
function of load power; typical values
0
V
f
2
DS
= 1880.05 MHz.
= 28 V; I
60
10
20
Dq
80
= 550 mA; f
001aal867
P
L
30
(W)
100
Power LDMOS transistor
40
70
60
50
40
30
20
10
0
1
(%)
η
= 1879.95 MHz;
D
50
© NXP B.V. 2010. All rights reserved.
P
L
001aal869
60
(W)
IMD3
IMD5
IMD7
70
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