BLF7G20L-90P,118 NXP Semiconductors, BLF7G20L-90P,118 Datasheet
BLF7G20L-90P,118
Specifications of BLF7G20L-90P,118
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BLF7G20L-90P,118 Summary of contents
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... BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 01 — 28 April 2010 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance Typical RF performance case Mode of operation f (MHz) CW 1805 to 1880 GSM EDGE 1805 to 1880 1 ...
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... BLF7G20LS-90P 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF7G20L-90P_7G20LS-90P_1 Product data sheet BLF7G20L-90P; BLF7G20LS-90P Pinning Description drain1 drain2 gate1 gate2 source drain1 drain2 gate1 gate2 source Ordering information Package Name Description - flanged LDMOST ceramic package; 2 mounting holes; ...
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... EVM rms EVM M Mode of operation: CW η D 7.1 Ruggedness in class-AB operation The BLF7G20L-90P and BLF7G20LS-90P are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF7G20L-90P_7G20LS-90P_1 Product data sheet BLF7G20L-90P; BLF7G20LS-90P Thermal characteristics Parameter thermal resistance from junction to case Characteristics C ...
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... Fig 1. One-tone CW power gain and drain efficiency as function of load power; 7.3 Two-tone (dB η 550 mA 1880.05 MHz. 2 Fig 2. Two-tone CW power gain and drain efficiency as function of load power; typical values BLF7G20L-90P_7G20LS-90P_1 Product data sheet BLF7G20L-90P; BLF7G20LS-90P (dB η 550 mA 1880 MHz typical values 001aal868 70 η D (%) IMD 60 (dBc ...
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... Fig 6. GSM-EDGE RMS EVM and peak EVM as function of load power; typical values 7.5 Single carrier IS-95 Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. BLF7G20L-90P_7G20LS-90P_1 Product data sheet BLF7G20L-90P; BLF7G20LS-90P 001aal870 70 η D (%) ...
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... Fig 9. Single carrier IS-95 peak-to-average power ratio as a function of load power; 7.6 Single carrier W-CDMA 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF. Channel bandwidth is 3.84 MHz. BLF7G20L-90P_7G20LS-90P_1 Product data sheet BLF7G20L-90P; BLF7G20LS-90P 001aal873 60 ACPR (dBc) η D (%) ...
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... C1, C2, C3 C4, C5 C6, C7, C8 C9, C10 C11 R1, R2 [1] American Technical Ceramics type 100A or capacitor of same quality. [2] TDK or capacitor of same quality. [3] American Technical Ceramics type 100B or capacitor of same quality. BLF7G20L-90P_7G20LS-90P_1 Product data sheet BLF7G20L-90P; BLF7G20LS-90P 001aal876 −20 60 η ACPR D (%) (dBc) −36 40 −52 20 −68 ...
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... Table 9. Typical values valid for both section in parallel unless otherwise specified. f MHz 1800 1840 1880 Fig 13. Definition of transistor impedance BLF7G20L-90P_7G20LS-90P_1 Product data sheet BLF7G20L-90P; BLF7G20LS-90P C2 INPUT REV 3.5 F/m; thickness = 0.76 mm; thickness copper plating = 35 μm. r Typical impedance Z S Ω 1.0 − j3.3 1.2 − ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version IEC SOT1121A Fig 14. Package outline SOT1121A BLF7G20L-90P_7G20LS-90P_1 Product data sheet BLF7G20L-90P; BLF7G20LS-90P scale ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version IEC SOT1121B Fig 15. Package outline SOT1121B BLF7G20L-90P_7G20LS-90P_1 Product data sheet BLF7G20L-90P; BLF7G20LS-90P scale ...
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... VSWR W-CDMA 10. Revision history Table 11. Revision history Document ID BLF7G20L-90P_7G20LS-90P_1 BLF7G20L-90P_7G20LS-90P_1 Product data sheet BLF7G20L-90P; BLF7G20LS-90P Abbreviations Description 3rd Generation Partnership Project Continuous Wave Enhanced Data rates for GSM Evolution ElectroStatic Discharge Interim Standard 95 Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal Oxide Semiconductor Transistor ...
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... BLF7G20L-90P_7G20LS-90P_1 Product data sheet BLF7G20L-90P; BLF7G20LS-90P [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... Contact information For more information, please visit: For sales office addresses, please send an email to: BLF7G20L-90P_7G20LS-90P_1 Product data sheet BLF7G20L-90P; BLF7G20LS-90P 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 01 — ...
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... NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved. Date of release: 28 April 2010 Document identifier: BLF7G20L-90P_7G20LS-90P_1 ...