BLF7G20L-90P,118 NXP Semiconductors, BLF7G20L-90P,118 Datasheet - Page 5

• Manufacturer Part Number: BLF7G20L-90P,118
• Description: TRANSISTOR PWR LDMOS ACC-4L
• Manufacturer: NXP Semiconductors

Specifications of BLF7G20L-90P,118

• Transistor Type: LDMOS
• Frequency: 1.81GHz ~ 1.88GHz
• Gain: 19dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Current - Test: 550mA
• Voltage - Test: 28V
• Power - Output: 84W
• Package / Case: SOT-1121A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934064087118

NXP Semiconductors
BLF7G20L-90P_7G20LS-90P_1
Product data sheet
Fig 4.
(dB)
G
p
21
20
19
18
17
16
15
14
0
V
GSM EDGE power gain and drain efficiency as
function of load power; typical values
DS
G
η
D
p
= 28 V; I
10
7.4 GSM EDGE
7.5 Single carrier IS-95
20
Dq
= 550 mA; f = 1880 MHz.
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
Fig 6. GSM-EDGE RMS EVM and peak EVM as function of load power; typical values
30
40
V
DS
50
= 28 V; I
All information provided in this document is subject to legal disclaimers.
P
L
001aal870
60
(W)
BLF7G20L-90P; BLF7G20LS-90P
Dq
EVM
(%)
= 550 mA; f = 1880 MHz.
70
Rev. 01 — 28 April 2010
25
20
15
10
70
60
50
40
30
20
10
0
5
0
(%)
η
0
D
10
Fig 5.
20
ACPR
(dBc)
−50
−60
−70
−80
30
0
V
GSM EDGE ACPR at 400 kHz and at 600 kHz as
function of load power; typical values
DS
40
= 28 V; I
10
50
ACPR
ACPR
20
Dq
EVM
EVM
P
= 550 mA; f = 1880 MHz.
L
400k
600k
001aal872
rms
60
M
(W)
30
70
Power LDMOS transistor
40
50
© NXP B.V. 2010. All rights reserved.
P
L
001aal871
60
(W)
70
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