NE350184C CEL, NE350184C Datasheet - Page 7

HJ-FET 20GHZ MICRO-X

NE350184C

Manufacturer Part Number
NE350184C
Description
HJ-FET 20GHZ MICRO-X
Manufacturer
CEL
Datasheet

Specifications of NE350184C

Transistor Type
HFET
Frequency
20GHz
Gain
13.5dB
Voltage - Rated
4V
Current Rating
70mA
Noise Figure
0.7dB
Current - Test
10mA
Voltage - Test
2V
Package / Case
Micro-X ceramic (84C)
Drain Source Voltage Vds
2 V
Gate-source Cutoff Voltage
- 2 V
Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
40 mS
Gate-source Breakdown Voltage
- 2 V
Continuous Drain Current
10 mA
Power Dissipation
165 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
Q2712397

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NE350184C-T1-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Company:
Part Number:
NE350184C-T1-A
Quantity:
55 000
Company:
Part Number:
NE350184C-T1A-A
Quantity:
55 000
RECOMMENDED SOLDERING CONDITIONS
methods and conditions other than those recommended below, contact your nearby sales office.
Infrared Reflow
Partial Heating
Caution Do not use different soldering methods together (except for partial heating).
This product should be soldered and mounted under the following recommended conditions.
Soldering Method
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
Peak temperature (terminal temperature)
Soldering time (per side of device)
Maximum chlorine content of rosin flux (% mass)
Data Sheet PG10584EJ01V0S
Soldering Conditions
: 260°C or below
: 10 seconds or less
: 60 seconds or less
: 120±30 seconds
: 3 times
: 0.2%(Wt.) or below
: 350°C or below
: 3 seconds or less
: 0.2%(Wt.) or below
Condition Symbol
NE350184C
HS350
For soldering
IR260
7

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