NE350184C CEL, NE350184C Datasheet - Page 4

• Manufacturer Part Number: NE350184C
• Description: HJ-FET 20GHZ MICRO-X
• Manufacturer: CEL

Specifications of NE350184C

• Transistor Type: HFET
• Frequency: 20GHz
• Gain: 13.5dB
• Voltage - Rated: 4V
• Current Rating: 70mA
• Noise Figure: 0.7dB
• Current - Test: 10mA
• Voltage - Test: 2V
• Package / Case: Micro-X ceramic (84C)
• Drain Source Voltage Vds: 2 V
• Gate-source Cutoff Voltage: - 2 V
• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 40 mS
• Gate-source Breakdown Voltage: - 2 V
• Continuous Drain Current: 10 mA
• Power Dissipation: 165 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: Q2712397

S-PARAMETERS
4
(S2P) that enables direct import to a microwave circuit simulator without keyboard input.
S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www.ncsd.necel.com/
Data Sheet PG10584EJ01V0S
NE350184C