NE350184C CEL, NE350184C Datasheet - Page 5

• Manufacturer Part Number: NE350184C
• Description: HJ-FET 20GHZ MICRO-X
• Manufacturer: CEL

Specifications of NE350184C

• Transistor Type: HFET
• Frequency: 20GHz
• Gain: 13.5dB
• Voltage - Rated: 4V
• Current Rating: 70mA
• Noise Figure: 0.7dB
• Current - Test: 10mA
• Voltage - Test: 2V
• Package / Case: Micro-X ceramic (84C)
• Drain Source Voltage Vds: 2 V
• Gate-source Cutoff Voltage: - 2 V
• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 40 mS
• Gate-source Breakdown Voltage: - 2 V
• Continuous Drain Current: 10 mA
• Power Dissipation: 165 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: Q2712397

RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm)
Reference Plane
(Calibration Plane)
φ
0.3 TH
RT/duroid 5880/ROGERS
t = 0.254 mm
εr = 2.20
tan delta = 0.0009 @10 GHz
Z
O
= 50 Ω
1.78
2.11
Data Sheet PG10584EJ01V0S
2.11 mm/R.P.
84C Ver. 2
2.07
1.78
1.0
0.5
6.0
Z
2.11
O
= 50 Ω
Reference Plane
(Calibration Plane)
NE350184C
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