NE350184C CEL, NE350184C Datasheet - Page 3
NE350184C
Manufacturer Part Number
NE350184C
Description
HJ-FET 20GHZ MICRO-X
Manufacturer
CEL
Datasheet
1.NE350184C.pdf
(8 pages)
Specifications of NE350184C
Transistor Type
HFET
Frequency
20GHz
Gain
13.5dB
Voltage - Rated
4V
Current Rating
70mA
Noise Figure
0.7dB
Current - Test
10mA
Voltage - Test
2V
Package / Case
Micro-X ceramic (84C)
Drain Source Voltage Vds
2 V
Gate-source Cutoff Voltage
- 2 V
Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
40 mS
Gate-source Breakdown Voltage
- 2 V
Continuous Drain Current
10 mA
Power Dissipation
165 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
Q2712397
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NE350184C-T1-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
TYPICAL CHARACTERISTICS (T
Remark The graphs indicate nominal characteristics.
250
200
150
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
80
60
40
20
–2.0
0
0
MINIMUM NOISE FIGURE,
0
ASSOCIATED GAIN vs. FREQUENCY
DRAIN CURRENT vs.
TOTAL POWER DISSIPATION
GATE TO SOURCE VOLTAGE
vs. AMBIENT TEMPERATURE
5
Gate to Source Voltage V
50
Ambient Temperature T
Frequency f (GHz)
10
Mounted on Glass Epoxy PCB
(1.08 cm
100
G
a
–1.0
15
2
NF
150
× 1.0 mm (t) )
min
20
A
GS
(˚C)
V
I
A
D
V
200
DS
(V)
= 10 mA
DS
= +25°C)
25
= 2 V
= 2 V
Data Sheet PG10584EJ01V0S
250
30
0
25
20
15
10
5
0
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
MINIMUM NOISE FIGURE,
80
60
40
20
ASSOCIATED GAIN vs. DRAIN CURRENT
0
0
f = 20 GHz
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DS
= 2 V
5
Drain to Source Voltage V
Drain Current I
10
1.0
15
NF
G
a
min
D
(mA)
20
DS
V
NE350184C
(V)
GS
25
–0.2 V
–0.4 V
–0.6 V
= 0 V
2.0
30
20
18
16
14
12
10
8
6
4
2
0
3