NE350184C CEL, NE350184C Datasheet - Page 6

HJ-FET 20GHZ MICRO-X

NE350184C

Manufacturer Part Number
NE350184C
Description
HJ-FET 20GHZ MICRO-X
Manufacturer
CEL
Datasheet

Specifications of NE350184C

Transistor Type
HFET
Frequency
20GHz
Gain
13.5dB
Voltage - Rated
4V
Current Rating
70mA
Noise Figure
0.7dB
Current - Test
10mA
Voltage - Test
2V
Package / Case
Micro-X ceramic (84C)
Drain Source Voltage Vds
2 V
Gate-source Cutoff Voltage
- 2 V
Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
40 mS
Gate-source Breakdown Voltage
- 2 V
Continuous Drain Current
10 mA
Power Dissipation
165 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
Q2712397

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NE350184C-T1-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Company:
Part Number:
NE350184C-T1-A
Quantity:
55 000
Company:
Part Number:
NE350184C-T1A-A
Quantity:
55 000
PACKAGE DIMENSIONS
84C (UNIT: mm)
6
2
Data Sheet PG10584EJ01V0S
PIN CONNECTIONS
L = 1.0±0.2 (All leads)
1. Source
2. Drain
3. Source
4. Gate
1.78±0.2
A
1
3
L
0.5 TYP.
L
4
NE350184C

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