BF1100WR,115 NXP Semiconductors, BF1100WR,115 Datasheet - Page 7

• Manufacturer Part Number: BF1100WR,115
• Description: MOSFET N-CH 14V 30MA SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BF1100WR,115

• Package / Case: CMPAK-4
• Transistor Type: N-Channel Dual Gate
• Frequency: 800MHz
• Voltage - Rated: 14V
• Current Rating: 30mA
• Noise Figure: 2dB
• Current - Test: 10mA
• Voltage - Test: 9V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 14 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 280 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934036570115; BF1100WR T/R; BF1100WR T/R

NXP Semiconductors
1995 Apr 25
handbook, halfpage
handbook, halfpage
Dual-gate MOS-FET
Fig.12 Drain current as a function of gate 1 voltage
V
V
T
V
R
Fig.10 Drain current as a function of gate 1 current;
DS
G2-S
j
DS
G1
(mA)
(mA)
= 25 C.
I D
I D
= 9 to 12 V.
= 9 V; V
= 180 kconnected to V
16
12
12
= 4 V.
8
4
0
8
4
0
0
0
(= V
typical values.
G2-S
GG
= 4 V.
); typical values; see Fig.26.
2
20
4
GG
); T
40
j
= 25 C.
6
60
8
I
G1
V
GG
MLD163
MLD165
(μA)
(V)
80
10
7
handbook, halfpage
handbook, halfpage
V
R
T
V
R
Fig.13 Drain current as a function of gate 1 voltage
j
Fig.11 Drain current as a function of gate 1 supply
G2-S
DS
G1
(mA)
G1
(mA)
= 25 C.
I D
I D
connected to V
= 12 V; V
= 250 k (connected to V
12
20
15
10
= 4 V.
5
0
8
4
0
0
0
(= V
voltage (= V
typical values; see Fig.26.
G2-S
GG
= 4 V.
GG
); typical values; see Fig.26.
4
.
4
GG
R
GG
G1
) and drain supply voltage;
); T
8
= 100 kΩ
j
= 25 C.
V
GG
8
Product specification
= V
BF1100WR
12
V
GG
DS
511 kΩ
147 kΩ
180 kΩ
205 kΩ
249 kΩ
301 kΩ
402 kΩ
(V)
MLD166
(V)
MLD164
12
16