BF1100WR,115 NXP Semiconductors, BF1100WR,115 Datasheet - Page 3

• Manufacturer Part Number: BF1100WR,115
• Description: MOSFET N-CH 14V 30MA SOT343R
• Manufacturer: NXP Semiconductors

Specifications of BF1100WR,115

• Package / Case: CMPAK-4
• Transistor Type: N-Channel Dual Gate
• Frequency: 800MHz
• Voltage - Rated: 14V
• Current Rating: 30mA
• Noise Figure: 2dB
• Current - Test: 10mA
• Voltage - Test: 9V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 14 V
• Continuous Drain Current: 0.03 A
• Power Dissipation: 280 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934036570115; BF1100WR T/R; BF1100WR T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board.
1995 Apr 25
handbook, halfpage
V
I
I
I
P
T
T
D
G1
G2
SYMBOL
stg
j
DS
tot
Dual-gate MOS-FET
(mW)
P tot
300
200
100
0
0
Fig.2 Power derating curve.
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
50
PARAMETER
100
150
T
amb
MLD180
( C)
o
200
see Fig.2; up to T
3
CONDITIONS
Fig.3
(mS)
amb
Y fs
40
30
20
10
0
= 50 C; note 1
50
Forward transfer admittance as a function
of junction temperature; typical values.
0





65

MIN.
50
Product specification
BF1100WR
14
30
10
10
280
+150
+150
100
MAX.
T ( C)
j
MLD156
o
V
mA
mA
mA
mW
C
C
150
UNIT