BF1100WR,115 NXP Semiconductors, BF1100WR,115 Datasheet
BF1100WR,115
Specifications of BF1100WR,115
BF1100WR T/R
BF1100WR T/R
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BF1100WR,115 Summary of contents
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DATA SHEET BF1100WR Dual-gate MOS-FET Product specification DISCRETE SEMICONDUCTORS 1995 Apr 25 ...
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... NXP Semiconductors Dual-gate MOS-FET FEATURES Specially designed for use supply voltage Short channel transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier GHz Superior cross-modulation performance during AGC. APPLICATIONS VHF and UHF applications such as television tuners and professional communications equipment ...
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... NXP Semiconductors Dual-gate MOS-FET LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V drain-source voltage DS I drain current D I gate 1 current G1 I gate 2 current G2 P total power dissipation tot T storage temperature stg T operating junction temperature j Note 1. Device mounted on a printed-circuit board. ...
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... NXP Semiconductors Dual-gate MOS-FET THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th j-a R thermal resistance from junction to soldering point th j-s Notes 1. Device mounted on a printed-circuit board the temperature at the soldering point of the source lead. s STATIC CHARACTERISTICS = 25 C; unless otherwise specified SYMBOL ...
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... NXP Semiconductors Dual-gate MOS-FET DYNAMIC CHARACTERISTICS = 25 C; V Common source; T amb SYMBOL PARAMETER y forward transfer admittance fs C input capacitance at gate 1 ig1-s C input capacitance at gate 2 ig2-s C drain-source capacitance os C reverse transfer capacitance MHz rs F noise figure 0 handbook, halfpage gain reduction (dB) ...
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... NXP Semiconductors Dual-gate MOS-FET 20 handbook, halfpage (mA) 16 1 1 Fig.6 Output characteristics; typical values. 250 handbook, halfpage (μA) 200 150 100 Fig.8 Gate 1 current as a function of gate 1 voltage; typical values. 1995 Apr 25 MLD159 handbook, halfpage = 1 (V) DS MLD161 ...
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... NXP Semiconductors Dual-gate MOS-FET 16 handbook, halfpage I D (mA G2 Fig.10 Drain current as a function of gate 1 current; typical values. 12 handbook, halfpage I D (mA G2 180 kconnected Fig.12 Drain current as a function of gate 1 voltage (= V ); typical values; see Fig.26. GG 1995 Apr 25 MLD163 ...
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... NXP Semiconductors Dual-gate MOS-FET 50 handbook, halfpage I G1 (μ 180 k (connected Fig.14 Gate 1 current as a function of gate 2 voltage; typical values. 16 handbook, halfpage I D (mA 180 k (connected Fig.16 Drain current as a function of the gate 2 voltage; typical values; see Fig.26. 1995 Apr 25 ...
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... NXP Semiconductors Dual-gate MOS-FET 2 10 handbook, halfpage y is (mS mA amb Fig.18 Input admittance as a function of frequency; typical values (mS) ϕ mA amb Fig.20 Forward transfer admittance and phase as a function of frequency; typical values. 1995 Apr 25 MLD181 (MHz) MLD183 2 10 handbook, halfpage ϕ ...
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... NXP Semiconductors Dual-gate MOS-FET 2 10 handbook, halfpage y is (mS mA amb Fig.22 Input admittance as a function of frequency; typical values (mS) ϕ mA amb Fig.24 Forward transfer admittance and phase as a function of frequency; typical values. 1995 Apr 25 MLD185 (MHz) MLD187 2 10 handbook, halfpage ϕ ...
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... NXP Semiconductors Dual-gate MOS-FET handbook, full pagewidth R GEN 50 For 180 k For 250 k 1995 Apr 25 V AGC Ω Ω Ω Fig.26 Cross-modulation test circuit. 11 Product specification BF1100WR DUT 50 Ω ≈ 450 nH C4 4.7 nF MGC420 V DS ...
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... NXP Semiconductors Dual-gate MOS-FET Table 1 Scattering parameters MAGNITUDE ANGLE (MHz) (ratio) (deg) 3.9 50 0.985 7.3 100 0.981 14.4 200 0.975 21.6 300 0.965 28.3 400 0.947 34.9 500 0.927 41.7 600 0.913 47.9 700 0.890 54.0 800 0.869 59.7 900 0.845 ...
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... NXP Semiconductors Dual-gate MOS-FET PACKAGE OUTLINE Plastic surface-mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 0.4 0.7 1.1 mm 0.1 0.8 0.3 0.5 OUTLINE VERSION IEC SOT343R 1995 Apr scale 0.25 2.2 1.35 1.3 1.15 0.10 1.8 1.15 ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...