BF1202WR,115 NXP Semiconductors, BF1202WR,115 Datasheet - Page 3

• Manufacturer Part Number: BF1202WR,115
• Description: MOSFET N-CH DUAL GATE 6V CMPAK-4
• Manufacturer: NXP Semiconductors

Specifications of BF1202WR,115

• Package / Case: CMPAK-4
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 30.5dB
• Voltage - Rated: 10V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 10 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055958115; BF1202WR T/R; BF1202WR T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. T
THERMAL CHARACTERISTICS
2010 Sep 16
handbook, halfpage
V
I
I
I
P
T
T
R
SYMBOL
D
G1
G2
SYMBOL
stg
j
DS
tot
N-channel dual-gate PoLo MOS-FETs
th j-s
(1) BF1202WR.
(2) BF1202; BF1202R.
(mW)
s
P tot
250
200
150
100
is the temperature of the soldering point of the source lead.
50
0
0
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
thermal resistance from junction to soldering point
Fig.4 Power derating curve.
BF1202; BF1202R
BF1202WR
BF1202; BF1202R
BF1202WR
50
PARAMETER
100
(2)
(1)
150
T s (°C)
PARAMETER
MCD951
200
T
T
s
s
 113 C; note 1
 119 C; note 1
3
CONDITIONS
BF1202; BF1202R; BF1202WR






65

MIN.
VALUE
185
155
10
30
10
10
200
200
+150
150
Product specification
MAX.
UNIT
K/W
K/W
V
mA
mA
mA
mW
mW
C
C
UNIT