BF1202WR,115 NXP Semiconductors, BF1202WR,115 Datasheet - Page 11

• Manufacturer Part Number: BF1202WR,115
• Description: MOSFET N-CH DUAL GATE 6V CMPAK-4
• Manufacturer: NXP Semiconductors

Specifications of BF1202WR,115

• Package / Case: CMPAK-4
• Transistor Type: N-Channel Dual Gate
• Frequency: 400MHz
• Gain: 30.5dB
• Voltage - Rated: 10V
• Current Rating: 30mA
• Noise Figure: 0.9dB
• Current - Test: 12mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 10 V
• Gate-source Breakdown Voltage: 6 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW
• Transistor Polarity: N-Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055958115; BF1202WR T/R; BF1202WR T/R

NXP Semiconductors
2010 Sep 16
Plastic surface-mounted package; reverse pinning; 4 leads
N-channel dual-gate PoLo MOS-FETs
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT143R
1.1
0.9
A
max
A 1
0.1
3
2
y
0.48
0.38
b p
IEC
0.88
0.78
b 1
e 1
D
e
0.15
0.09
c
JEDEC
3.0
2.8
D
b 1
REFERENCES
b p
0
1.4
1.2
E
4
1
1.9
w
SC-61AA
e
B
JEITA
scale
M
11
1
B
1.7
e 1
v
M
H E
2.5
2.1
BF1202; BF1202R; BF1202WR
2 mm
A
A
0.55
0.25
L p
A 1
0.45
0.25
Q
detail X
PROJECTION
0.2
EUROPEAN
v
H E
E
0.1
w
L p
Q
0.1
Product specification
y
A
ISSUE DATE
04-11-16
06-03-16
c
SOT143R
X