BLF242,112 NXP Semiconductors, BLF242,112 Datasheet - Page 7

TRANSISTOR RF DMOS SOT123A

BLF242,112

Manufacturer Part Number
BLF242,112
Description
TRANSISTOR RF DMOS SOT123A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF242,112

Package / Case
SOT-123A
Transistor Type
N-Channel
Frequency
175MHz
Gain
16dB
Voltage - Rated
65V
Current Rating
1A
Current - Test
10mA
Voltage - Test
28V
Power - Output
5W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Resistance Drain-source Rds (on)
5 Ohm @ 1 V
Transistor Polarity
N-Channel
Configuration
Single Dual Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
16000 mW
Maximum Operating Temperature
+ 200 C
Application
HF/VHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
5W
Power Gain (typ)@vds
16@28VdB
Frequency (max)
175MHz
Package Type
SOT-123A
Pin Count
4
Forward Transconductance (typ)
0.24S
Drain Source Resistance (max)
5000@1Vmohm
Input Capacitance (typ)@vds
13@28VpF
Output Capacitance (typ)@vds
9.4@28VpF
Reverse Capacitance (typ)
1.7@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
60%
Mounting
Screw
Mode Of Operation
CW Class-B
Number Of Elements
1
Power Dissipation (max)
16000mW
Vswr (max)
50
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-2396
933817030112
BLF242
BLF242
Philips Semiconductors
2003 Oct 13
handbook, halfpage
handbook, full pagewidth
HF-VHF power MOS transistor
Class-B operation; V
R
Fig.9
f = 175 MHz.
GS
(dB)
G p
20
10
= 47 ; f = 175 MHz.
0
0
Power gain and efficiency as functions of
load power, typical values.
input
50
DS
= 28 V; I
C1
DQ
5
G p
= 10 mA;
d
C2
L1
P L (W)
Fig.11 Test circuit for class-B operation.
V G
R1
MGP143
C3
C3
L2
10
100
50
0
(%)
D.U.T.
d
7
L3
handbook, halfpage
Class-B operation; V
R
Fig.10 Load power as a function of input power,
GS
(W)
P L
= 47 ; f = 175 MHz.
10
5
0
L4
C5
0
typical values.
L5
R2
L6
C6
DS
= 28 V; I
C7
C8
DQ
0.5
= 10 mA;
output
C9
50
MGP145
P IN (W)
V D
Product specification
BLF242
MGP144
1

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