BLF242,112 NXP Semiconductors, BLF242,112 Datasheet - Page 5

• Manufacturer Part Number: BLF242,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF242,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 175MHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current Rating: 1A
• Current - Test: 10mA
• Voltage - Test: 28V
• Power - Output: 5W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 5 Ohm @ 1 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 16000 mW
• Maximum Operating Temperature: + 200 C
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 5W
• Power Gain (typ)@vds: 16@28VdB
• Frequency (max): 175MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 0.24S
• Drain Source Resistance (max): 5000@1Vmohm
• Input Capacitance (typ)@vds: 13@28VpF
• Output Capacitance (typ)@vds: 9.4@28VpF
• Reverse Capacitance (typ): 1.7@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 16000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2396; 933817030112; BLF242; BLF242

Philips Semiconductors
2003 Oct 13
handbook, halfpage
handbook, halfpage
R DS (on)
HF-VHF power MOS transistor
V
Fig.4
I
Fig.6
( )
D
(mV/K)
DS
T.C.
= 0.3 A; V
= 10 V.
–2
–4
4
2
0
6
4
2
0
0
0
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
Drain-source on-state resistance as a
function of junction temperature, typical
values.
GS
= 10 V.
100
50
200
100
I D (mA)
T j (
o
C)
MBB778
MBB777
300
150
5
handbook, halfpage
handbook, halfpage
V
Fig.5
V
Fig.7
DS
GS
(A)
I D
(pF)
1.5
0.5
= 10 V; T
C
= 0; f = 1 MHz.
30
20
10
1
0
0
0
0
Drain current as a function of gate-source
voltage, typical values.
Input and output capacitance as functions
of drain-source voltage, typical values.
j
= 25 C.
10
5
C os
C is
10
20
Product specification
V GS (V)
V DS (V)
BLF242
MGP142
MBB776
15
30