BLF242,112 NXP Semiconductors, BLF242,112 Datasheet - Page 2

• Manufacturer Part Number: BLF242,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF242,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 175MHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current Rating: 1A
• Current - Test: 10mA
• Voltage - Test: 28V
• Power - Output: 5W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 5 Ohm @ 1 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 16000 mW
• Maximum Operating Temperature: + 200 C
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 5W
• Power Gain (typ)@vds: 16@28VdB
• Frequency (max): 175MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 0.24S
• Drain Source Resistance (max): 5000@1Vmohm
• Input Capacitance (typ)@vds: 13@28VpF
• Output Capacitance (typ)@vds: 9.4@28VpF
• Reverse Capacitance (typ): 1.7@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 16000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2396; 933817030112; BLF242; BLF242

Philips Semiconductors
FEATURES
DESCRIPTION
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for professional transmitter
applications in the HF/VHF frequency
range.
The transistor is encapsulated in a
4-lead, SOT123A flange package,
with a ceramic cap. All leads are
isolated from the flange.
PINNING - SOT123A
QUICK REFERENCE DATA
RF performance at T
2003 Oct 13
CW, class-B
PIN
High power gain
Low noise
Easy power control
Good thermal stability
Withstands full load mismatch
Gold metallization ensures
excellent reliability.
HF-VHF power MOS transistor
1
2
3
4
drain
source
gate
source
MODE OF OPERATION
DESCRIPTION
h
= 25 C in a common source test circuit.
PIN CONFIGURATION
handbook, halfpage
This product is supplied in anti-static packing to prevent damage caused by
electrostatic discharge during transport and handling. For further information,
refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
(MHz)
175
f
1
2
2
Fig.1 Simplified outline and symbol.
V
(V)
28
DS
WARNING
CAUTION
MSB057
4
3
(W)
P
5
L
typ. 16
(dB)
G
13
p
Product specification
g
MBB072
BLF242
d
s
typ. 60
(%)
50
D