BLF242,112 NXP Semiconductors, BLF242,112 Datasheet - Page 6

• Manufacturer Part Number: BLF242,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF242,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 175MHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current Rating: 1A
• Current - Test: 10mA
• Voltage - Test: 28V
• Power - Output: 5W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 5 Ohm @ 1 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 16000 mW
• Maximum Operating Temperature: + 200 C
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 5W
• Power Gain (typ)@vds: 16@28VdB
• Frequency (max): 175MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 0.24S
• Drain Source Resistance (max): 5000@1Vmohm
• Input Capacitance (typ)@vds: 13@28VpF
• Output Capacitance (typ)@vds: 9.4@28VpF
• Reverse Capacitance (typ): 1.7@28VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 16000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2396; 933817030112; BLF242; BLF242

Philips Semiconductors
APPLICATION INFORMATION FOR CLASS-B OPERATION
T
RF performance in CW operation in a common source class-B test circuit.
Ruggedness in class-B operation
The BLF242 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the
following conditions: V
Noise figure (see Fig.11)
V
F = typ. 5.5 dB.
2003 Oct 13
handbook, halfpage
MODE OF OPERATION
CW, class-B
h
DS
HF-VHF power MOS transistor
= 25 C; R
V
Fig.8
GS
= 28 V; I
(pF)
C rs
= 0; f = 1 MHz.
6
4
2
0
0
Feedback capacitance as a function of
drain-source voltage, typical values.
D
th mb-h
= 0.2 A; f = 175 MHz; R
= 0.3 K/W; unless otherwise specified.
10
DS
= 28 V; f =175 MHz at rated output power.
(MHz)
175
f
20
GS
V DS (V)
= 47 ; T
V
(V)
28
MBB775
DS
30
h
= 25 C. Input and output power matched for P
(mA)
I
10
DQ
6
(W)
P
5
L
typ. 16
(dB)
G
13
P
typ. 60
(%)
50
D
Product specification
L
= 5 W;
BLF242
R
( )
47
GS