BLF647,112 NXP Semiconductors, BLF647,112 Datasheet - Page 9

• Manufacturer Part Number: BLF647,112
• Description: TRANSISTOR RF DMOS SOT540A
• Manufacturer: NXP Semiconductors

Specifications of BLF647,112

• Package / Case: SOT540A
• Transistor Type: LDMOS
• Frequency: 600MHz
• Gain: 14.5dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Voltage - Test: 28V
• Power - Output: 120W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.16 Ohm (Typ) @ 9 V
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 18 A
• Power Dissipation: 290000 mW
• Maximum Operating Temperature: + 200 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2419; 934056498112; BLF647; BLF647

Philips Semiconductors
Application at 800 MHz
2001 Nov 27
handbook, halfpage
handbook, halfpage
UHF power LDMOS transistor
T
2-tone: f
measured in 800 MHz test circuit.
Fig.8
T
measured in 800 MHz test circuit.
Fig.10 Power gain and drain efficiency as functions
h
h
(dB)
= 25 C; V
= 25 C; V
(dB)
G p
G p
20
15
10
20
15
10
5
0
5
0
0
0
1
= 800 MHz ( 6 dB); f
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
of load power; typical values.
DS
DS
= 32 V; I
= 32 V; I
G p
G p
50
100
DQ
DQ
D
D
= 1 A.
= 1 A; CW, class-AB; f = 800 MHz;
2
= 800.1 MHz ( 6 dB)
100
200
P L (PEP) (W)
150
P L (W)
MGW543
MGW545
300
200
80
60
40
20
0
80
60
40
20
0
(%)
(%)
D
D
9
handbook, halfpage
T
2-tone: f
measured in 800 MHz test circuit.
Fig.9
h
(dBc)
d im
= 25 C; V
20
40
60
80
0
0
1
= 800 MHz ( 6 dB); f
Intermodulation distortion as a function of
peak envelope output power; typical values.
DS
= 32 V; I
100
DQ
= 1 A.
2
= 800.1 MHz ( 6 dB)
200
Product specification
P L (PEP) (W)
d 3
d 5
MGW544
BLF647
300