BLF647,112 NXP Semiconductors, BLF647,112 Datasheet - Page 13
![TRANSISTOR RF DMOS SOT540A](/photos/5/63/56380/568-sot-800a_sml.jpg)
BLF647,112
Manufacturer Part Number
BLF647,112
Description
TRANSISTOR RF DMOS SOT540A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF647112.pdf
(16 pages)
Specifications of BLF647,112
Package / Case
SOT540A
Transistor Type
LDMOS
Frequency
600MHz
Gain
14.5dB
Voltage - Rated
65V
Current Rating
18A
Voltage - Test
28V
Power - Output
120W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Resistance Drain-source Rds (on)
0.16 Ohm (Typ) @ 9 V
Transistor Polarity
N-Channel
Configuration
Dual Common Source
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
18 A
Power Dissipation
290000 mW
Maximum Operating Temperature
+ 200 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Current - Test
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-2419
934056498112
BLF647
BLF647
934056498112
BLF647
BLF647
Philips Semiconductors
PACKAGE OUTLINE
2001 Nov 27
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
UHF power LDMOS transistor
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
OUTLINE
VERSION
SOT540A
H
0.227
0.197
5.77
5.00
A
U 2
A
A
0.335
0.325
8.51
8.26
b
0.006
0.004
0.15
0.10
c
IEC
22.05
21.64
0.868
0.852
D
22.05
21.64
0.868
0.852
D 1
3
1
10.21
0.402
e
JEDEC
U 1
H 1
D 1
e
D
q
10.26
10.06
0.404
0.396
E
REFERENCES
10.31
10.01
0.406
0.394
b
E 1
2
4
0
0.070
0.060
1.78
1.52
F
scale
EIAJ
13
5
15.75
14.73
0.620
0.580
H
w 2
w 3
10 mm
5
M
M
18.72
18.47
0.737
0.727
C
H 1
C
M
F
p
B
0.133
0.123
3.38
3.12
p
w 1
M
0.107
0.097
2.72
2.46
Q
A
M
27.94
1.100
B
q
M
PROJECTION
EUROPEAN
34.16
33.91
1.345
1.335
U 1
E 1
0.390
0.380
9.91
9.65
U 2
Product specification
c
Q
0.010 0.020
0.25
w 1
ISSUE DATE
BLF647
99-08-27
99-12-28
0.51
w 2
SOT540A
E
0.010
0.25
w 3