BLF647,112 NXP Semiconductors, BLF647,112 Datasheet - Page 10

• Manufacturer Part Number: BLF647,112
• Description: TRANSISTOR RF DMOS SOT540A
• Manufacturer: NXP Semiconductors

Specifications of BLF647,112

• Package / Case: SOT540A
• Transistor Type: LDMOS
• Frequency: 600MHz
• Gain: 14.5dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Voltage - Test: 28V
• Power - Output: 120W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.16 Ohm (Typ) @ 9 V
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 18 A
• Power Dissipation: 290000 mW
• Maximum Operating Temperature: + 200 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2419; 934056498112; BLF647; BLF647

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Dimensions in mm.
50
input
B1
C1
C2
V bias
L1
L2
R1
Fig.11 Class-AB common source 800 MHz test circuit.
C9
C7
C8
R2
L3
L4
R3
C5
L15
3
L16
C6
TR1
C10
3
L6
L5
C11
L7
L8
C12
C13
8
L10
C14
L9
L11
L12
B2
C15
C16
L14
V D
L13
C20
C18
C19
R4
C17
MGW538
output
50