BLF647,112 NXP Semiconductors, BLF647,112 Datasheet - Page 4

• Manufacturer Part Number: BLF647,112
• Description: TRANSISTOR RF DMOS SOT540A
• Manufacturer: NXP Semiconductors

Specifications of BLF647,112

• Package / Case: SOT540A
• Transistor Type: LDMOS
• Frequency: 600MHz
• Gain: 14.5dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Voltage - Test: 28V
• Power - Output: 120W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.16 Ohm (Typ) @ 9 V
• Transistor Polarity: N-Channel
• Configuration: Dual Common Source
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 18 A
• Power Dissipation: 290000 mW
• Maximum Operating Temperature: + 200 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2419; 934056498112; BLF647; BLF647

Philips Semiconductors
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
Ruggedness in class-AB operation
The BLF647 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V
The BLF647 is capable of withstanding abrupt source or load mismatch errors under the nominal power conditions.
Impedances (per section)
At f = 600 MHz, P
At f = 800 MHz, P
2001 Nov 27
CW, class-AB
2-tone, class-AB
CW, class-AB
2-tone, class-AB
MODE OF OPERATION
UHF power LDMOS transistor
L
L
= 120 W, V
= 150 W, V
DS
= 28 V; f = 100 MHz at rated load power.
f
f
DS
DS
1
1
= 600; f
= 800; f
= 28 V and I
= 32 V and I
(MHz)
600
800
f
2
2
= 600.1
= 800.1
DQ
DQ
= 1 A: Z
= 1 A: Z
h
in
in
V
= 25 C; R
(V)
28
28
32
32
DS
4
= 1.0 + j2.0
= 1.0 + j3.8
120 (PEP)
150 (PEP)
th mb-h
(W)
120
150
P
L
and Z
and Z
= 0.2 K/W, unless otherwise specified.
L
L
= 2.7 + j0.7 .
= 1.8 + j0.7 .
typ. 12.5
typ. 13
>14.5
>14.5
(dB)
G
p
typ. 60
typ. 45
>55
>40
(%)
Product specification
D
BLF647
typ. 30
(dBc)
d
im
26