BLF871,112 NXP Semiconductors, BLF871,112 Datasheet - Page 6

• Manufacturer Part Number: BLF871,112
• Description: TRANSISTOR RF LDMOS SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLF871,112

• Package / Case: SOT467C
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 19dB
• Voltage - Rated: 89V
• Current Rating: 1.4µA
• Current - Test: 500mA
• Voltage - Test: 40V
• Power - Output: 100W
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.21 Ohms
• Drain-source Breakdown Voltage: 89 V
• Gate-source Breakdown Voltage: 13 V
• Power Dissipation: 24 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4737; 934062051112

NXP Semiconductors
BLF871_BLF871S_4
Product data sheet
Fig 5.
(dB)
G
p
24
22
20
18
0
V
narrowband 860 MHz test circuit.
DVB-T power gain and drain efficiency as
functions of average load power; typical
values
DS
= 40 V; I
7.1.3 DVB-T
G
η
D
p
Dq
20
= 0.5 A; measured in a common source
40
P
L(AV)
001aaj280
(W)
Rev. 04 — 19 November 2009
60
60
40
20
0
(%)
η
D
Fig 6.
IMD3
(dBc)
(1) Low frequency component
(2) High frequency component
−15
−25
−35
−45
−55
0
V
narrowband 860 MHz test circuit.
DVB-T third order intermodulation distortion
as a function of average load power; typical
values
DS
= 40 V; I
BLF871; BLF871S
Dq
20
= 0.5 A; measured in a common source
(1)
(2)
UHF power LDMOS transistor
40
P
L(AV)
© NXP B.V. 2010. All rights reserved.
001aaj281
(W)
60
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