BLF871,112 NXP Semiconductors, BLF871,112 Datasheet - Page 5
![TRANSISTOR RF LDMOS SOT467C](/photos/5/63/56379/2-ldmost_sot467c_pkg_sml.jpg)
BLF871,112
Manufacturer Part Number
BLF871,112
Description
TRANSISTOR RF LDMOS SOT467C
Manufacturer
NXP Semiconductors
Datasheet
1.BLF871112.pdf
(19 pages)
Specifications of BLF871,112
Package / Case
SOT467C
Transistor Type
LDMOS
Frequency
860MHz
Gain
19dB
Voltage - Rated
89V
Current Rating
1.4µA
Current - Test
500mA
Voltage - Test
40V
Power - Output
100W
Mounting Style
SMD/SMT
Resistance Drain-source Rds (on)
0.21 Ohms
Drain-source Breakdown Voltage
89 V
Gate-source Breakdown Voltage
13 V
Power Dissipation
24 W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4737
934062051112
934062051112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF871,112
Manufacturer:
UMS
Quantity:
1 400
NXP Semiconductors
BLF871_BLF871S_4
Product data sheet
Fig 3.
(dB)
G
p
25
23
21
19
17
0
V
narrowband 860 MHz test circuit.
2-Tone power gain and drain efficiency as
functions of average load power; typical
values
DS
= 40 V; I
7.1.1 CW
7.1.2 2-Tone
7.1 Narrowband RF figures
G
η
D
p
Dq
40
= 0.5 A; measured in a common source
Fig 2.
V
CW power gain and drain efficiency as a function of load power; typical values
80
DS
= 40 V; I
P
L(AV)
001aaj278
(W)
Dq
Rev. 04 — 19 November 2009
(dB)
G
= 0.5 A; measured in a common source narrowband 860 MHz test circuit.
120
p
24
22
20
18
16
80
60
40
20
0
(%)
0
η
D
G
η
Fig 4.
D
p
60
IMD3
(dBc)
(1) Low frequency component
(2) High frequency component
−20
−40
−60
0
0
V
narrowband 860 MHz test circuit.
2-Tone third order intermodulation distortion
as a function of average load power; typical
values
DS
= 40 V; I
120
BLF871; BLF871S
Dq
P
40
L
= 0.5 A; measured in a common source
001aaj277
(W)
(1)
(2)
UHF power LDMOS transistor
180
80
60
40
20
0
(%)
η
D
80
P
L(AV)
© NXP B.V. 2010. All rights reserved.
001aaj279
(W)
120
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