BLF871,112 NXP Semiconductors, BLF871,112 Datasheet - Page 10

• Manufacturer Part Number: BLF871,112
• Description: TRANSISTOR RF LDMOS SOT467C
• Manufacturer: NXP Semiconductors

Specifications of BLF871,112

• Package / Case: SOT467C
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 19dB
• Voltage - Rated: 89V
• Current Rating: 1.4µA
• Current - Test: 500mA
• Voltage - Test: 40V
• Power - Output: 100W
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.21 Ohms
• Drain-source Breakdown Voltage: 89 V
• Gate-source Breakdown Voltage: 13 V
• Power Dissipation: 24 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4737; 934062051112

NXP Semiconductors
BLF871_BLF871S_4
Product data sheet
7.5 Reliability
Table 8.
Simulated Z
f
(MHz)
925
950
975
1000
Fig 13. Electromigration (I
(10) T
(11) T
(1) T
(2) T
(3) T
(4) T
(5) T
(6) T
(7) T
(8) T
(9) T
Years
10
10
10
10
10
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × 1 / δ.
1
5
4
3
2
j
j
j
j
j
j
j
j
j
j
j
Typical impedance
i
= 100 °C
= 110 °C
= 120 °C
= 130 °C
= 140 °C
= 150 °C
= 160 °C
= 170 °C
= 180 °C
= 190 °C
= 200 °C
0
and Z
(7) (8) (9) (10) (11)
L
device impedance; impedance info at V
Rev. 04 — 19 November 2009
DS(DC)
…continued
Z
(Ω)
1.004 + j0.459
1.005 + j0.540
1.007 + j0.619
1.009 + j0.696
i
)
2
(1) (2) (3) (4) (5) (6)
BLF871; BLF871S
DS
4
= 42 V.
UHF power LDMOS transistor
Z
(Ω)
2.456 + j2.455
2.378 + j2.388
2.303 + j2.320
2.230 + j2.250
L
I
DS(DC)
(A)
© NXP B.V. 2010. All rights reserved.
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