BLF871 NXP Semiconductors, BLF871 Datasheet
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BLF871
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BLF871 Summary of contents
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... BLF871; BLF871S UHF power LDMOS transistor Rev. 04 — 19 November 2009 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications ...
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... Pinning Description drain gate source drain gate source Ordering information Name Description - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C - earless LDMOST ceramic package; 2 leads Rev. 04 — 19 November 2009 BLF871; BLF871S UHF power LDMOS transistor Simplified outline Graphic symbol 1 [ sym112 1 [ sym112 ...
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... Thermal characteristics Parameter thermal resistance from junction to case Characteristics Conditions 3 MHz MHz MHz Rev. 04 — 19 November 2009 BLF871; BLF871S UHF power LDMOS transistor Min Max - 89 −0.5 +13 −65 +150 - 200 Conditions Typ = 80 °C; [1] T 0.95 case L(AV) Min Typ Max [ 1. 105 [ ...
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... RF performance in a common-source narrowband 860 MHz test circuit L(PEP) (MHz) (V) (A) ( 860; 40 0.5 100 860.1 2 858 40 0.5 - Rev. 04 — 19 November 2009 BLF871; BLF871S UHF power LDMOS transistor 001aaj276 (V) DS η IMD3 PAR L(AV (W) (dB) (%) (dBc) (dB) > 19 > 44 < − > 19 > 30 < −31 ...
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... P (W) L(AV narrowband 860 MHz test circuit. (1) Low frequency component (2) High frequency component Fig 4. 2-Tone third order intermodulation distortion as a function of average load power; typical values Rev. 04 — 19 November 2009 BLF871; BLF871S UHF power LDMOS transistor 001aaj277 80 η D (%) 120 180 P (W) ...
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... narrowband 860 MHz test circuit. (1) Low frequency component (2) High frequency component Fig 6. DVB-T third order intermodulation distortion as a function of average load power; typical values Rev. 04 — 19 November 2009 BLF871; BLF871S UHF power LDMOS transistor 001aaj281 (1) ( (W) L(AV) = 0.5 A; measured in a common source Dq © ...
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... A; measured in a common source broadband Dq 8. test circuit as described Fig 8. 2-Tone third order intermodulation distortion as a function of frequency; typical values Rev. 04 — 19 November 2009 BLF871; BLF871S UHF power LDMOS transistor 001aaj283 (2) (1) 500 600 700 800 900 f (MHz) Section L(AV) ...
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... L(AV L(AV L(AV L(AV) Rev. 04 — 19 November 2009 BLF871; BLF871S UHF power LDMOS transistor 001aaj285 (2) (1) 500 600 700 800 900 f (MHz) Section L(AV L(AV) 900 Section 8. © NXP B.V. 2010. All rights reserved ...
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... NXP Semiconductors 7.3 Ruggedness in class-AB operation The BLF871 and BLF871S are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 860 MHz at rated power. 7.4 Impedance information Fig 12. Definition of transistor impedance Table 8. Simulated Z f (MHz) 300 325 ...
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... DS(DC) Rev. 04 — 19 November 2009 BLF871; BLF871S UHF power LDMOS transistor = (Ω) 2.456 + j2.455 2.378 + j2.388 2.303 + j2.320 2.230 + j2.250 001aaj287 4 ...
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... F/m; height = 0.79 mm; Cu (top/bottom metallization); r Rev. 04 — 19 November 2009 BLF871; BLF871S UHF power LDMOS transistor Remarks [1] [2] [1] [1] [1] [1] TDK C570X7R1H106KT000N or capacitor of same quality. [3] [3] Tekelec [3] [3] (W × × [4] (W × L) 2.4 mm × [4] (W × ...
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L23 C25 L22 C24 See Table 9 for a list of components. Fig 14. Class-AB common-source broadband amplifier C11 C12 C27 C26 C20 C1 ...
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... NXP Semiconductors 40 mm Fig 15. Printed-Circuit Board (PCB) for class-AB common source amplifier BLF871_BLF871S_4 Product data sheet BLF871; BLF871S 40 mm Rev. 04 — 19 November 2009 UHF power LDMOS transistor 76.2 mm 001aaj289 © NXP B.V. 2010. All rights reserved ...
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... Fig 16. Component layout for class-AB common source amplifier BLF871_BLF871S_4 Product data sheet C11 C9 C27 C20 C22 L20 L1 C21 C2 L7 C10 Rev. 04 — 19 November 2009 BLF871; BLF871S UHF power LDMOS transistor C12 001aaj290 © NXP B.V. 2010. All rights reserved ...
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... REFERENCES JEDEC EIAJ Rev. 04 — 19 November 2009 BLF871; BLF871S UHF power LDMOS transistor SOT467C 20.45 5.97 14.27 0.25 0.51 20.19 5.72 ...
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... References JEDEC JEITA Rev. 04 — 19 November 2009 BLF871; BLF871S UHF power LDMOS transistor 5.97 0.25 5.72 0.235 0.01 0.225 sot467b_po European Issue date projection 08-12-09 09-10-27 © ...
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... TTF UHF VSWR 11. Revision history Table 11. Revision history Document ID Release date BLF871_BLF871S_4 20091119 • Modifications: This document now describes both the BLF871 and the BLF871S. BLF871_3 20090921 BLF871_2 20090305 BLF871_1 20081218 BLF871_BLF871S_4 Product data sheet Abbreviations Description Continuous Wave Complementary Cumulative Distribution Function ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 04 — 19 November 2009 BLF871; BLF871S UHF power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 19 November 2009 Document identifier: BLF871_BLF871S_4 All rights reserved. ...