BLF175,112 NXP Semiconductors, BLF175,112 Datasheet - Page 9

• Manufacturer Part Number: BLF175,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF175,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 108MHz
• Gain: 20dB
• Voltage - Rated: 125V
• Current Rating: 4A
• Current - Test: 30mA
• Voltage - Test: 50V
• Power - Output: 30W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 68000 mW
• Maximum Operating Temperature: + 200 C
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 125V
• Output Power (max): 30W
• Power Gain (typ)@vds: 44@50V/24@50V/20@50VdB
• Frequency (max): 108MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 1.6S
• Drain Source Resistance (max): 1500@10Vmohm
• Input Capacitance (typ)@vds: 130@50VpF
• Output Capacitance (typ)@vds: 36@50VpF
• Reverse Capacitance (typ): 3.7@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 65%
• Mounting: Screw
• Mode Of Operation: CW Class B/Class-A/Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 68000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2400; 933939780112; BLF175; BLF175

Philips Semiconductors
List of components (class-A test circuit)
Note
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2003 Jul 22
C1
C2
C3, C4, C6
C5
C7
C8
C9
L1
L2
L3
L4
R1
R2
R3
T1
HF/VHF power MOS transistor
COMPONENT
multilayer ceramic chip capacitor
(note 1)
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
aluminium electrolytic capacitor
multilayer ceramic chip capacitor
(note 1)
4 turns enamelled 0.6 mm copper
wire
36 turns enamelled 0.7 mm copper
wire wound on a rod grade 4B1
Ferroxcube drain choke
grade 3B Ferroxcube wideband RF
choke
8 turns enamelled 1 mm copper wire 189 nH
0.4 W metal film resistor
0.4 W metal film resistor
0.4 W metal film resistor
4 : 1 transformer; 18 turns twisted
pair of 0.25 mm copper wire with
10 twists per cm, wound on a grade
4C6 toroidal core
DESCRIPTION
9
39 pF
3
100 nF
10 nF
3
10 F, 63 V
24 pF
86 nH
20 H
24
1500
10
VALUE
10 nF
100 nF
length 3.3 mm;
int. dia. 5 mm;
leads 2
length 30 mm;
int. dia. 5 mm
length 9.5 mm;
int. dia. 5 mm;
leads 2
dimensions
9
DIMENSIONS
6
3 mm
2 mm
3 mm
2222 852 47103
2222 852 47104
2222 852 47103
2222 852 47104
2222 030 28109
4330 030 30031
4312 020 36640
4322 020 97171
Product specification
CATALOGUE NO.
BLF175