BLF175,112 NXP Semiconductors, BLF175,112 Datasheet - Page 7

• Manufacturer Part Number: BLF175,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF175,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 108MHz
• Gain: 20dB
• Voltage - Rated: 125V
• Current Rating: 4A
• Current - Test: 30mA
• Voltage - Test: 50V
• Power - Output: 30W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 68000 mW
• Maximum Operating Temperature: + 200 C
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 125V
• Output Power (max): 30W
• Power Gain (typ)@vds: 44@50V/24@50V/20@50VdB
• Frequency (max): 108MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 1.6S
• Drain Source Resistance (max): 1500@10Vmohm
• Input Capacitance (typ)@vds: 130@50VpF
• Output Capacitance (typ)@vds: 36@50VpF
• Reverse Capacitance (typ): 3.7@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 65%
• Mounting: Screw
• Mode Of Operation: CW Class B/Class-A/Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 68000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2400; 933939780112; BLF175; BLF175

Philips Semiconductors
2003 Jul 22
handbook, halfpage
handbook, halfpage
HF/VHF power MOS transistor
Class-A operation; V
R
solid line: T
dotted line: T
Fig.9
Class-A operation; V
P
Fig.11 Power gain as a function of frequency;
L
GS
(dB)
(dB)
= 8 W (PEP); R
G p
G p
40
30
20
10
= 24 ; f
40
30
20
10
0
0
0
0
Power gain as a function of load power;
typical values.
typical values.
h
= 25 C.
h
1
= 70 C.
= 28.000 MHz; f
GS
10
5
DS
DS
= 24 ; f
= 50 V; I
= 50 V; I
1
2
= 28.001 MHz.
DQ
DQ
10
20
f
2
= 1 MHz.
= 0.8 A;
= 0.8 A;
15
30
P L (W) PEP
f (MHz)
MGP069
MGP071
20
40
7
handbook, halfpage
handbook, halfpage
Class-A operation; V
R
solid line: T
dotted line: T
Fig.10 Third order intermodulation distortion as a
Class-A operation; V
P
Fig.12 Third order intermodulation distortion as a
L
GS
(dB)
(dB)
d 3
= 8 W (PEP); R
d 3
= 24 ; f
20
40
60
80
20
40
60
0
0
0
function of load power; typical values.
function of frequency; typical values.
h
= 25 C.
h
1
= 70 C.
= 28.000 MHz; f
GS
10
DS
DS
5
= 24 ; f
= 50 V; I
= 50 V; I
1
2
= 28.001 MHz.
DQ
DQ
10
20
f
2
= 1 MHz.
= 0.8 A;
= 0.8 A;
Product specification
15
30
P L (W) PEP
f (MHz)
BLF175
MGP070
MGP072
20
40