BLF175,112 NXP Semiconductors, BLF175,112 Datasheet - Page 3

• Manufacturer Part Number: BLF175,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF175,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 108MHz
• Gain: 20dB
• Voltage - Rated: 125V
• Current Rating: 4A
• Current - Test: 30mA
• Voltage - Test: 50V
• Power - Output: 30W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 68000 mW
• Maximum Operating Temperature: + 200 C
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 125V
• Output Power (max): 30W
• Power Gain (typ)@vds: 44@50V/24@50V/20@50VdB
• Frequency (max): 108MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 1.6S
• Drain Source Resistance (max): 1500@10Vmohm
• Input Capacitance (typ)@vds: 130@50VpF
• Output Capacitance (typ)@vds: 36@50VpF
• Reverse Capacitance (typ): 3.7@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 65%
• Mounting: Screw
• Mode Of Operation: CW Class B/Class-A/Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 68000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2400; 933939780112; BLF175; BLF175

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
2003 Jul 22
handbook, halfpage
V
I
P
T
T
R
R
SYMBOL
SYMBOL
D
V
stg
j
DS
tot
th j-mb
th mb-h
HF/VHF power MOS transistor
(1) Current is this area may be limited by R
(2) T
GS
10
(A)
I D
10
mb
1
1
1
= 25 C.
(1)
drain-source voltage
gate-source voltage
DC drain current
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
Fig.2 DC SOAR.
PARAMETER
10
PARAMETER
(2)
V DS (V)
DSon
.
MRA905
10
2
T
mb
25 C
3
handbook, halfpage
CONDITIONS
(1) Continuous operation.
(2) Short-time operation during mismatch.
P tot
(W)
T
T
100
80
60
40
20
mb
mb
0
0
= 25 C; P
= 25 C; P
CONDITIONS
Fig.3 Power derating curves.
40
tot
tot
= 68 W
= 68 W
(1)
(2)
80
65
MIN.
Product specification
120
125
20
4
68
+150
200
VALUE
MAX.
2.6
0.3
T h ( C)
BLF175
MGP063
160
V
V
A
W
C
C
UNIT
UNIT
K/W
K/W