BLF175,112 NXP Semiconductors, BLF175,112 Datasheet - Page 13

• Manufacturer Part Number: BLF175,112
• Description: TRANSISTOR RF DMOS SOT123A
• Manufacturer: NXP Semiconductors

Specifications of BLF175,112

• Package / Case: SOT-123A
• Transistor Type: N-Channel
• Frequency: 108MHz
• Gain: 20dB
• Voltage - Rated: 125V
• Current Rating: 4A
• Current - Test: 30mA
• Voltage - Test: 50V
• Power - Output: 30W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 68000 mW
• Maximum Operating Temperature: + 200 C
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 125V
• Output Power (max): 30W
• Power Gain (typ)@vds: 44@50V/24@50V/20@50VdB
• Frequency (max): 108MHz
• Package Type: SOT-123A
• Pin Count: 4
• Forward Transconductance (typ): 1.6S
• Drain Source Resistance (max): 1500@10Vmohm
• Input Capacitance (typ)@vds: 130@50VpF
• Output Capacitance (typ)@vds: 36@50VpF
• Reverse Capacitance (typ): 3.7@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 65%
• Mounting: Screw
• Mode Of Operation: CW Class B/Class-A/Class-AB
• Number Of Elements: 1
• Power Dissipation (max): 68000mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2400; 933939780112; BLF175; BLF175

Philips Semiconductors
List of components (class-AB test circuit)
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (
2003 Jul 22
C1, C10
C2, C4, C8, C11
C3
C5, C6, C9
C7
C12
L1
L2, L3
L4
L5
L6
R1
R2
R3
HF/VHF power MOS transistor
COMPONENT
thickness 1.6 mm.
multilayer ceramic chip capacitor
(note 1)
film dielectric trimmer
multilayer ceramic chip capacitor
(note 1)
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
(note 1)
aluminium electrolytic capacitor
9 turns enamelled 1 mm copper wire 280 nH
stripline (note 2)
14 turns enamelled 1 mm copper
wire
10 turns enamelled 1 mm copper
wire
grade 3B Ferroxcube wideband RF
choke
0.4 W metal film resistor
0.4 W metal film resistor
0.4 W metal film resistor
DESCRIPTION
13
62 pF
5 to 60 pF
51 pF
100 nF
10 pF
10 F, 63 V
30
1650 nH
380 nH
22
1 M
10
VALUE
length 11 mm;
int. dia. 6 mm;
leads 2
length 10 mm;
width 6 mm
length 20 mm;
int. dia. 12 mm;
leads 2
length 13 mm;
int. dia. 7 mm;
leads 2
DIMENSIONS
4 mm
2 mm
3 mm
2222 809 07011
2222 852 47104
2222 030 28109
4312 020 36640
Product specification
CATALOGUE NO.
r
= 4.5),
BLF175