AT84CS001VTPY E2V, AT84CS001VTPY Datasheet - Page 30

• Manufacturer Part Number: AT84CS001VTPY
• Description: Demultiplexer 240-Pin EBGA
• Manufacturer: E2V

Specifications of AT84CS001VTPY

• Package: 240EBGA
• Power Supply Type: Analog|Digital
• Typical Supply Current: 600 mA
• Typical Operating Supply Voltage: 3.3 V
• Minimum Operating Supply Voltage: 2.375|3.15 V
• Maximum Operating Supply Voltage: 2.625|3.45 V

7. Thermal and Moisture Characteristics
Figure 7-1.
7.1
30
Moisture Characteristics
0809E–BDC–05/09
0.40 mm copper thickness under die,
Sn60Pb40 balls, 0.76 mm diameter
Square die 7.0 x 7.0 = 49 mm2
DMUX Thermal Model for 240 EBGA (Typical Values) Derived from ANSYS Thermal Simulation
50 µm thick Epoxy/Ag glue,
25 x 25 mm EBGA
This device is sensitive to moisture (MSL3 according to JEDEC standard). Its shelf life in sealed bag is
12 months at < 40 °C and < 90% relative humidity (RH).
Once the bag is opened, devices that will be subjected to infrared reflow, vapor-phase reflow, or equiva-
lent processing (peak package body temperature 220 °C) must be:
Before mounting, devices will require baking if the humidity indicator is > 20% when read at
°C.
If baking is indeed required, the devices might be baked for:
Assumptions:
• Mounted within 168 hours in factory conditions of ≤ 30 °C/60% RH, or
• Stored at ≤ 20% RH
• 192 hours at 40 °C + 5 °C/-0 °C and < 5% RH for low-temperature device containers, or
• 24 hours at 125 °C ± 5 °C for high-temperature device containers
4 mm x 4 mm heating zone
Copper base (top half
Silicon Die 49 mm2
Maximum thermal resistance from junction to case = 1.7˚C/watt
Epoxy/Ag glue
Copper base
0.05 ˚C/Watt
of thickness)
= 0.02 W /c m/˚C
= 0.95 W /c m/˚C
= 3.6 W /c m/˚C
Typical thermal resistance from junction to case =
0.2 + 1.15 + 0.05 + 0.05 = 1.45˚C/watt
Silicon Junction
package
Top of
1.55˚C/Watt
0.20˚C/Watt
1.15˚C/Watt
0.05˚C/Watt
(104 balls)
2 internal
rows
0.23˚C/Watt
1.57˚C
/Watt
0.33˚C
/Watt
(136 balls)
2 external
rows
1.33˚C
/Watt
0.27˚C
/Watt
in plane = 0.35 W /c m/˚C
z = 0.012 W /c m/˚C
= 0.50 W /c m/˚C
BTresin over balls
Balls Sn63Pb37
Silicon Junction
Infinite heatsink at
0.05
0.2
1.15
Case were all ball bottoms
are connected to infinite heatsink:
bottom of balls
1.55
Reduction
1.90
0.23
1.60
Infinite heatsink at
Junction
bottom of balls
Silicon
1.90
2.95
Reduction
1.83
junction to bottom of balls
Junction
Infinite heatsink at
Silicon
bottom of balls
Thermal resistance
5.0˚C/watt max
3.88˚C/watt
e2v semiconductors SAS 2009
AT84CS001
23 °C ± 5