BAR 81W E6327 Infineon Technologies, BAR 81W E6327 Datasheet - Page 4

• Manufacturer Part Number: BAR 81W E6327
• Description: DIODE RF SGL 30V 100MA SOT-343
• Manufacturer: Infineon Technologies

Specifications of BAR 81W E6327

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Diode Type: Standard - Single
• Voltage - Peak Reverse (max): 30V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.9pF @ 3V, 1MHz
• Resistance @ If, F: 1 Ohm @ 5mA, 100MHz
• Power Dissipation (max): 100mW
• Configuration: Single Dual Anode Dual Cathode
• Reverse Voltage: 30 V
• Forward Continuous Current: 100 mA
• Carrier Life: 0.08 us
• Forward Voltage Drop: 1 V
• Maximum Diode Capacitance: 0.9 pF at 3 V
• Maximum Operating Temperature: + 125 C
• Maximum Series Resistance @ Maximum If: 1 Ohms at 5 mA
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Power Dissipation: 100 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAR 81W E6327; BAR81WE6327INTR; BAR81WE6327XT; SP000010192

Forward current I
BAR81W
Permissible Pulse Load
I
Fmax
mA
10
10
10
120
100
90
80
70
60
50
40
30
20
10
-
/ I
0
2
1
0
10
0
FDC
-6
15
=
10
30
-5
(t
p
45
)
10
F
-4
60
=
BAR81W
75
10
(T
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-3
S
90 105 120 °C
)
10
-2
s
T
t
P
S
150
10
0
4
Permissible Puls Load R
BAR81W
K/W
10
10
10
10
3
2
1
0
10
-6
10
-5
10
-4
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
-3
thJS
10
=
-2
2007-04-19
BAR81...
(t
p
s
)
t
P
10
0