BAR 81W E6327 Infineon Technologies, BAR 81W E6327 Datasheet - Page 2

• Manufacturer Part Number: BAR 81W E6327
• Description: DIODE RF SGL 30V 100MA SOT-343
• Manufacturer: Infineon Technologies

Specifications of BAR 81W E6327

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Diode Type: Standard - Single
• Voltage - Peak Reverse (max): 30V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.9pF @ 3V, 1MHz
• Resistance @ If, F: 1 Ohm @ 5mA, 100MHz
• Power Dissipation (max): 100mW
• Configuration: Single Dual Anode Dual Cathode
• Reverse Voltage: 30 V
• Forward Continuous Current: 100 mA
• Carrier Life: 0.08 us
• Forward Voltage Drop: 1 V
• Maximum Diode Capacitance: 0.9 pF at 3 V
• Maximum Operating Temperature: + 125 C
• Maximum Series Resistance @ Maximum If: 1 Ohms at 5 mA
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Power Dissipation: 100 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAR 81W E6327; BAR81WE6327INTR; BAR81WE6327XT; SP000010192

1
Shunt Insertion loss
I
Shunt isolation
V
Electrical Characteristics at T
Parameter
DC Characteristics
Reverse current
V
Forward voltage
I
Configuration of the shunt-diode
- A perfect ground is essential for optimum isolation
- The anode pins should be used as passage for RF
AC Characteristics
Diode capacitance
V
V
Forward resistance
I
Charge carrier life time
I
R
I-region width
For more information please refer to Application Note 049.
F
F
F
F
R
R
R
R
L
= 10 mA, f = 1.89 GHz
= 100 mA
= 5 mA, f = 100 MHz
= 10 mA, I
= 3 V, f = 1.89 GHz
= 20 V
= 100
= 1 V, f = 1 MHz
= 3 V, f = 1 MHz
R
1)
= 6 mA, measured at I
1)
A
= 25°C, unless otherwise specified
R
= 3 mA,
2
Symbol
I
V
I
I
C
r
W
L
SO
R
f
F
T
rr
I
min.
-
-
-
-
-
-
-
-
-
Values
0.93
0.57
typ.
0.7
0.7
0.6
3.5
80
30
-
max.
2007-04-19
20
0.9
1
BAR81...
1
1
-
-
-
-
V
pF
ns
dB
Unit
nA
µm