BAR 81W E6327 Infineon Technologies, BAR 81W E6327 Datasheet
BAR 81W E6327
Specifications of BAR 81W E6327
BAR81WE6327INTR
BAR81WE6327XT
SP000010192
Related parts for BAR 81W E6327
BAR 81W E6327 Summary of contents
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Silicon RF Switching Diode Designed for use in shunt configuration in high performance RF switches High shunt signal isolation Low shunt insertion loss Optimized for short - open transformation using lines Pb-free (RoHS compliant) package Qualified according AEC Q101 BAR81W ...
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Electrical Characteristics at T Parameter DC Characteristics Reverse current Forward voltage I = 100 Characteristics Diode capacitance MHz ...
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Diode capacitance Parameter 1 pF 0.8 0.7 0.6 1 Mhz ... 1.8 GHz 0.5 0.4 0.3 0 Forward resistance 100MHz 1 10 ...
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Forward current BAR81W 120 mA 100 Permissible Pulse Load BAR81W Fmax FDC p ...
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Package Outline +0.1 0.3 -0.05 4x 0.1 Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 2 ±0.2 0.1 MAX. 1.3 0 0.15 1 ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...