BAR 81W E6327 Infineon Technologies, BAR 81W E6327 Datasheet - Page 3

• Manufacturer Part Number: BAR 81W E6327
• Description: DIODE RF SGL 30V 100MA SOT-343
• Manufacturer: Infineon Technologies

Specifications of BAR 81W E6327

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Diode Type: Standard - Single
• Voltage - Peak Reverse (max): 30V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.9pF @ 3V, 1MHz
• Resistance @ If, F: 1 Ohm @ 5mA, 100MHz
• Power Dissipation (max): 100mW
• Configuration: Single Dual Anode Dual Cathode
• Reverse Voltage: 30 V
• Forward Continuous Current: 100 mA
• Carrier Life: 0.08 us
• Forward Voltage Drop: 1 V
• Maximum Diode Capacitance: 0.9 pF at 3 V
• Maximum Operating Temperature: + 125 C
• Maximum Series Resistance @ Maximum If: 1 Ohms at 5 mA
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Power Dissipation: 100 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAR 81W E6327; BAR81WE6327INTR; BAR81WE6327XT; SP000010192

Diode capacitance C
f = Parameter
Forward resistance r
f = 100MHz
Ohm
pF
10
0.8
0.7
0.6
0.5
0.4
0.3
0.2
10
10
1
-1
0
1
0
10
-2
2
4
1 Mhz ... 1.8 GHz
10
6
-1
8
T
f
10
= (I
= (V
10
0
12
F
R
)
14
)
10
16
1
V
V
I
R
F
mA
20
10
2
3
Forward current I
T
Reverse parallel resistance R
f = Parameter
KOhm
A
= Parameter
10
10
10
10
10
10
10
10
10
10
10
10
10
A
-1
-1
-2
-3
-4
-5
-6
4
3
2
1
0
0
0
0
2
0.2
4
6
100 MHz
0.4
F
1.8 GHz
=
8
1 GHz
0.6
10
(V
F
12
)
0.8
14
P
2007-04-19
BAR81...
= (V
16
-40 °C
25 °C
85 °C
125 °C
V
V
V
V
F
R
R
)
1.2
20