SPB80N04S2-H4 Infineon Technologies, SPB80N04S2-H4 Datasheet - Page 7

• Manufacturer Part Number: SPB80N04S2-H4
• Description: MOSFET N-CH 40V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPB80N04S2-H4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 148nC @ 10V
• Input Capacitance (ciss) @ Vds: 5890pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000016358; SPB80N04S2H4T

15 Drain-source breakdown voltage
V
parameter: I
13 Typ. avalanche energy
E
par.: I
(BR)DSS
AS
mJ
700
600
550
500
450
400
350
300
250
200
150
100
= f (T
V
48
46
45
44
43
42
41
40
39
38
37
36
50
D
-60
0
25
= 80 A , V
SPP80N04S2-H4
= f (T
j
)
45
-20
D
=10 mA
j
)
65
20
DD
85
= 25 V, R
60
105
100
125
GS
145
140
= 25 Ω
°C
°C
T
T
j
j
200
185
Page 7
14 Typ. gate charge
V
parameter: I
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
SPP80N04S2-H4,SPB80N04S2-H4
SPP80N04S2-H4
20
Gate
D
= 80 A pulsed
40
)
60
0,2
V
80
DS max
100 120
SPI80N04S2-H4
0,8 V
2003-05-08
DS max
140
Q
nC
Gate
170