SPB80N04S2-H4 Infineon Technologies, SPB80N04S2-H4 Datasheet - Page 6

• Manufacturer Part Number: SPB80N04S2-H4
• Description: MOSFET N-CH 40V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPB80N04S2-H4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 148nC @ 10V
• Input Capacitance (ciss) @ Vds: 5890pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000016358; SPB80N04S2H4T

9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
Ω
pF
10
10
10
10
12
10
9
8
7
6
5
4
3
2
1
0
-60
5
4
3
2
0
SPP80N04S2-H4
= f (T
DS
)
-20
D
j
5
GS
)
= 80 A, V
=0V, f=1 MHz
20
10
98%
60
typ
GS
15
C
C
C
= 10 V
iss
oss
rss
100
20
140 °C
V
T
V
j
DS
200
30
Page 6
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
10
10
10
10
3.5
2.5
1.5
0.5
V
A
2
1
0
-60
3
2
1
0
0
= f (T j )
SPP80N04S2-H4,SPB80N04S2-H4
SD
SPP80N04S2-H4
)
0.4
-20
GS
0.8
p
= V
= 80 µs
20
250 µA
DS
1.2
T
T
T
T
j
j
j
j
= 25 °C typ
= 175 °C typ
= 25 °C (98%)
= 175 °C (98%)
60
1.6
1.25 mA
SPI80N04S2-H4
100
2
2003-05-08
2.4
°C
V
V
T
j
SD
180
3