SPB80N04S2-H4 Infineon Technologies, SPB80N04S2-H4 Datasheet - Page 2

• Manufacturer Part Number: SPB80N04S2-H4
• Description: MOSFET N-CH 40V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPB80N04S2-H4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 148nC @ 10V
• Input Capacitance (ciss) @ Vds: 5890pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000016358; SPB80N04S2H4T

Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
1 Current limited by bondwire ; with an R
information see app.-note ANPS071E available at www.infineon.com/optimos
2 Defined by design. Not subject to production test.
3 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
=250µA
=0V, I
=40V, V
=40V, V
=20V, V
=10V, I
2
cooling area
D
D
=1mA
GS
GS
DS
=80A
=0V, T
=0V, T j =125°C
=0V
j
3)
=25°C
GS
2)
= V
DS
j
thJC
= 25 °C, unless otherwise specified
= 0.5K/W the chip is able to carry I
Page 2
Symbol
V
V
I
I
R
Symbol
R
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
thJC
thJA
thJA
SPP80N04S2-H4,SPB80N04S2-H4
min.
min.
2.1
40
-
-
-
-
-
-
-
-
D
= 200A at 25°C, for detailed
Values
Values
0.01
0.35
typ.
typ.
3.4
3
1
1
-
-
-
-
SPI80N04S2-H4
max.
max.
100
100
0.5
62
62
40
2003-05-08
4
1
4
-
Unit
V
µA
nA
mΩ
Unit
K/W