SPB80N04S2-H4 Infineon Technologies, SPB80N04S2-H4 Datasheet - Page 5

• Manufacturer Part Number: SPB80N04S2-H4
• Description: MOSFET N-CH 40V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPB80N04S2-H4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 148nC @ 10V
• Input Capacitance (ciss) @ Vds: 5890pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000016358; SPB80N04S2H4T

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
190
160
140
120
100
160
120
100
A
A
80
60
40
20
80
60
40
20
0
0
0
0
DS
SPP80N04S2-H4
GS
P
0.5
tot
); T
h
g
); V
= 300W
f
p
p
1
= 80 µs
= 80 µs
1
j
=25°C
DS
1.5
≥ 2 x I
2
2
D
2.5
3
x R
3
DS(on)max
4
3.5
e
c
a
d
b
V GS [V]
4
a
b
c
d
e
f
g
h
V
V
V
V
DS
GS
10.0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
6
5
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
= f(I
140
100
m Ω
S
13
11
10
80
60
40
20
9
8
7
6
5
4
3
2
1
0
0
0
0
D
SPP80N04S2-H4,SPB80N04S2-H4
SPP80N04S2-H4
= f (I
V
); T
GS
5.5
d
20
[V] =
20
6.0
j
e
=25°C
D
fs
GS
)
40
6.5
f
40
g
7.0
60
60
10.0
h
80
80
d
100 120 140
SPI80N04S2-H4
100
2003-05-08
120
A
e
A
I
D
I
D
h
f
g
180
160