FS70SM-06 Renesas Electronics America, FS70SM-06 Datasheet - Page 7

• Manufacturer Part Number: FS70SM-06
• Description: MOSFET N-CH 60V 70A TO-3P
• Manufacturer: Renesas Electronics America

Specifications of FS70SM-06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 6540pF @ 10V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -

FS70SM-06
Rev.2.00
10
10
10
1.4
1.2
1.0
0.8
0.6
0.4
–1
7
5
4
3
2
7
5
4
3
2
1
0
Aug 07, 2006
Switching Time Measurement Circuit
R
Vin Monitor
GEN
Channel Temperature Tch (°C)
V
I
Channel Temperature Tch (°C)
V
I
Pulse Test
–50
–50
D
Channel Temperature (Typical)
Channel Temperature (Typical)
D
GS
GS
= 1mA
= 35A
On-State Resistance vs.
= 0V
= 10V
Breakdown Voltage vs.
R
0
0
GS
page 5 of 6
50
50
D.U.T.
100
100
R
V
L
150
150
DD
Vout
Monitor
10
10
10
10
–1
–2
7
5
3
2
7
5
3
2
7
5
3
2
1
0
10
D = 1.0
0.5
0.2
0.1
–4
t d(on)
2 3 57
Vout
Vin
5.0
4.0
3.0
2.0
1.0
Transient Thermal Impedance Characteristics
0
10
V
I
0.05
0.02
0.01
Single Pulse
Channel Temperature Tch (°C)
–50
D
Channel Temperature (Typical)
–3
DS
= 1mA
2 3 57
10%
= 10V
10%
Threshold Voltage vs.
Switching Waveform
Pulse Width tw (s)
90%
10
0
t r
–2
2 3 57
50
10
t d(off)
–1
2 3 5710
100
90%
0
150
P
90%
2 3 5710
D
tw
DM
=
T
tw
T
10%
t f
1
2 3 5710
2