FS70SM-06 Renesas Electronics America, FS70SM-06 Datasheet - Page 3

• Manufacturer Part Number: FS70SM-06
• Description: MOSFET N-CH 60V 70A TO-3P
• Manufacturer: Renesas Electronics America

Specifications of FS70SM-06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 6540pF @ 10V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -

FS70SM-06
High-Speed Switching Use
Nch Power MOS FET
Features
Outline
Applications
Motor control, Lamp control, Solenoid control, DC-DC converters, etc.
Maximum Ratings
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
Rev.2.00
Drive voltage : 10 V
V
r
I
Integrated Fast Recovery Diode (TYP.) : 85 ns
DS(ON) (max)
D
DSS
: 70 A
: 60 V
Aug 07, 2006
Parameter
: 7.5 m
RENESAS Package code: PRSS0004ZB-A
(Package name: TO-3P)
page 1 of 6
1
Symbol
2
V
V
Tstg
Tch
I
I
I
3
P
—
4
DSS
GSS
I
DM
I
SM
DA
D
S
D
– 55 to +150
– 55 to +150
Ratings
1
280
280
150
4.8
60
70
70
70
20
2, 4
3
Unit
W
V
V
A
A
A
A
A
g
C
C
(Previous: MEJ02G0099-0101)
1. Gate
2. Drain
3. Source
4. Drain
V
V
L = 100 H
Typical value
GS
DS
= 0 V
= 0 V
REJ03G1430-0200
Conditions
Aug 07, 2006
(Tc = 25°C)
Rev.2.00