FS70SM-06 Renesas Electronics America, FS70SM-06 Datasheet - Page 5

• Manufacturer Part Number: FS70SM-06
• Description: MOSFET N-CH 60V 70A TO-3P
• Manufacturer: Renesas Electronics America

Specifications of FS70SM-06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 6540pF @ 10V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -

FS70SM-06
Performance Curves
Rev.2.00
Aug 07, 2006
250
200
150
100
100
1.0
0.8
0.6
0.4
0.2
50
80
60
40
20
0
0
0
0
0
0
Power Dissipation Derating Curve
V
Output Characteristics (Typical)
Drain-Source Voltage V
Gate-Source Voltage V
Gate-Source Voltage (Typical)
GS
Case Temperature Tc (°C)
= 20V 10V
0.4
4
On-State Voltage vs.
50
8V
page 3 of 6
0.8
8
Tc = 25°C
Pulse Test
100
1.2
12
P
D
= 150W
150
Tc = 25°C
Pulse Test
GS
1.6
DS
I
16
D
= 140A
(V)
100A
(V)
6V
5V
4V
70A
30A
200
2.0
20
10
10
10
50
40
30
20
10
10
3
2
7
5
3
2
7
5
3
2
7
5
3
0
8
6
4
2
0
2
1
0
3 5 7
0
2
V
Tc = 25°C
Single Pulse
GS
3 5 7
Drain-Source Voltage V
Output Characteristics (Typical)
Drain-Source Voltage V
Maximum Safe Operating Area
Tc = 25°C
Pulse Test
= 20V 10V
10
0.2
On-State Resistance vs.
Drain Current (Typical)
0
10
Drain Current I
2
0
8V
3 5 7
2
0.4
3 5 7
6V
10
10
1
Tc = 25°C
Pulse Test
0.6
2
1
2
3 5 7
D
3 5 7
(A)
V
0.8
DS
DS
GS
100µs
1ms
DC
tw = 10µs
10
= 10V
10
(V)
(V)
2
4.5V
20V
5V
4V
2 3
2
1.0
2