FS70SM-06 Renesas Electronics America, FS70SM-06 Datasheet - Page 6

• Manufacturer Part Number: FS70SM-06
• Description: MOSFET N-CH 60V 70A TO-3P
• Manufacturer: Renesas Electronics America

Specifications of FS70SM-06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 6540pF @ 10V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -

FS70SM-06
Rev.2.00
Aug 07, 2006
100
10
10
10
80
60
40
20
20
16
12
10
0
3
2
7
5
3
2
7
5
3
2
7
5
3
8
4
0
5
4
3
0
0
–1
Transfer Characteristics (Typical)
Tch = 25°C
I
D
Gate-Source Voltage V
Drain-Source Voltage V
Drain-Source Voltage (Typical)
2
= 70A
3 5 7
Gate-Source Voltage vs.
Gate Charge Qg (nC)
40
4
Gate Charge (Typical)
Capacitance vs.
10
page 4 of 6
0
80
8
V
2
DS
3 5 7
= 10V
120
12
10
Tch = 25°C
f = 1MHz
V
Tc = 25°C
V
Pulse Test
1
GS
DS
GS
2
160
DS
16
20V
40V
= 0V
3 5 7
= 10V
Ciss
Coss
Crss
(V)
(V)
100
10
20
2
100
10
10
10
10
10
10
80
60
40
20
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
0
2
1
0
10
3
2
1
10
0
0
Switching Characteristics (Typical)
0
Tc = 125°C
V
Pulse Test
Forward Transfer Admittance vs.
V
Pulse Test
Source-Drain Voltage V
DS
t
t
t
t
d(off)
f
r
d(on)
GS
Source-Drain Diode Forward
2 3 4 5 7
2 3 4 5 7
= 10V
Characteristics (Typical)
0.4
Drain Current (Typical)
= 0V
Drain Current I
Drain Current I
0.8
10
10
Tch = 25°C
V
V
R GEN = R GS = 50Ω
1
1
DD
GS
75°C
25°C
1.2
= 30V
= 10V
2 3 4 5 7
2 3 4 5 7
T
75°C
125°C
D
D
C
= 25°C
(A)
(A)
1.6
SD
(V)
10
10
2.0
2
2