FS70SM-06 Renesas Electronics America, FS70SM-06 Datasheet - Page 4

• Manufacturer Part Number: FS70SM-06
• Description: MOSFET N-CH 60V 70A TO-3P
• Manufacturer: Renesas Electronics America

Specifications of FS70SM-06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 6540pF @ 10V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -

Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
FS70SM-06
Electrical Characteristics
Rev.2.00
Aug 07, 2006
Parameter
page 2 of 6
Symbol
V
V
R
r
V
Coss
(BR)DSS
DS(ON)
| y
Crss
Ciss
t
t
I
I
DS(ON)
V
th(ch-c)
GS(th)
d(on)
d(off)
GSS
DSS
t
t
t
SD
rr
fs
r
f
|
Min
2.0
60
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.200
6540
1640
Typ
790
195
290
210
3.0
5.7
1.0
70
95
85
—
—
—
—
0.263
Max
0.83
0.1
4.0
7.5
1.5
—
—
—
—
—
—
—
—
—
—
0.1
Unit
m
mA
C/W
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
V
A
I
V
V
I
I
I
I
V
f = 1MHz
V
V
R
I
Channel to case
I
D
D
D
D
D
S
S
GS
DS
DS
DD
GS
GEN
= 1 mA, V
= 1 mA, V
= 35 A, V
= 35 A, V
= 35 A, V
= 35 A, V
= 70 A, d
= 20 V, V
= 60 V, V
= 10 V, V
= 30 V, I
= 10 V,
= R
Test Conditions
GS
is
GS
GS
GS
DS
= 50
GS
DS
/d
D
GS
GS
(Tch = 25°C)
t
= 10 V
= 10 V
= 10 V
= 35 A,
= 0 V
DS
= 10 V
= 0 V
= – 100 A/ s
= 0 V
= 0 V,
= 0 V