IRF7705GTRPBF International Rectifier, IRF7705GTRPBF Datasheet - Page 7
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IRF7705GTRPBF
Manufacturer Part Number
IRF7705GTRPBF
Description
MOSFET P-CH 30V 8A 8-TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7705GTRPBF.pdf
(8 pages)
Specifications of IRF7705GTRPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
88nC @ 10V
Input Capacitance (ciss) @ Vds
2774pF @ 25V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Transistor Polarity
P Channel
Continuous Drain Current Id
-8A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
18mohm
Rds(on) Test Voltage Vgs
-10V
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
30 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 8 A
Power Dissipation
1.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
58 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7705GTRPBFTR
TSSOP8 Package Outline
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Dimensions are shown in milimeters (inches)
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