IRF7705GTRPBF International Rectifier, IRF7705GTRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7705GTRPBF
• Description: MOSFET P-CH 30V 8A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7705GTRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 88nC @ 10V
• Input Capacitance (ciss) @ Vds: 2774pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -8A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 18mohm
• Rds(on) Test Voltage Vgs: -10V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 30 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 8 A
• Power Dissipation: 1.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 58 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7705GTRPBFTR

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0.01
100
0.1
10
100
1
0.1
10
Fig 1. Typical Output Characteristics
1
0.1
2.0
Fig 3. Typical Transfer Characteristics
T = 150 C
J
-V DS , Drain-to-Source Voltage (V)
-V
2.5
GS
°
, Gate-to-Source Voltage (V)
1
T = 25 C
3.0
J
20µs PULSE WIDTH
Tj = 25°C
-2.5V
°
V
20µs PULSE WIDTH
3.5
DS
10
= -15V
TOP
BOTTOM -2.5V
4.0
VGS
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
100
4.5
100
0.1
10
2.0
1.5
1.0
0.5
0.0
1
0.1
-60 -40 -20
Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics
I =
D
-8.0A
-V DS , Drain-to-Source Voltage (V)
T , Junction Temperature ( C)
J
Vs. Temperature
0
1
20 40 60 80 100 120 140 160
20µs PULSE WIDTH
Tj = 150°C
-2.5V
10
TOP
BOTTOM -2.5V
V
°
GS
=
VGS
-10V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
100
3