IRF7705GTRPBF International Rectifier, IRF7705GTRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7705GTRPBF
• Description: MOSFET P-CH 30V 8A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7705GTRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 88nC @ 10V
• Input Capacitance (ciss) @ Vds: 2774pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -8A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 18mohm
• Rds(on) Test Voltage Vgs: -10V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 30 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 8 A
• Power Dissipation: 1.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 58 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7705GTRPBFTR

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8.0
6.0
4.0
2.0
0.0
100
0.1
10
0.0001
1
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature
Case Temperature
C
(THERMAL RESPONSE)
0.001
SINGLE PULSE
75
100
0.01
( C)
t , Rectangular Pulse Duration (sec)
1
125
°
0.1
150
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
1
V
10%
90%
V
GS
DS
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
d(on)
10
J
≤ 0.1 %
≤ 1
t
r
DM
x Z
1
thJA
P
2
DM
+ T
100
A
t
1
t
d(off)
t
2
t
f
+
-
1000
5