IRF7705GTRPBF International Rectifier, IRF7705GTRPBF Datasheet - Page 6

• Manufacturer Part Number: IRF7705GTRPBF
• Description: MOSFET P-CH 30V 8A 8-TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7705GTRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 88nC @ 10V
• Input Capacitance (ciss) @ Vds: 2774pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -8A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 18mohm
• Rds(on) Test Voltage Vgs: -10V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 30 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 8 A
• Power Dissipation: 1.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 58 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7705GTRPBFTR

6
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
Fig 12. Typical On-Resistance Vs.
Fig 14a. Basic Gate Charge Waveform
V
2.0
G
Q
3.0
GS
-V GS, Gate -to -Source Voltage (V)
Gate Voltage
4.0
Q
Charge
Q
5.0
GD
G
I D = -8.0A
6.0
7.0
8.0
9.0
10.0
0.06
0.04
0.02
0.00
Fig 13. Typical On-Resistance Vs.
Fig 14b. Gate Charge Test Circuit
0
12V
V
GS
Same Type as D.U.T.
Current Regulator
10
.2µF
-I D , Drain Current ( A )
Drain Current
VGS = -4.5V
50KΩ
-3mA
Current Sampling Resistors
20
.3µF
I
G
VGS = -10V
30
D.U.T.
www.irf.com
I
D
40
+
-
V
DS
50