IRF7705GTRPBF International Rectifier, IRF7705GTRPBF Datasheet - Page 2
IRF7705GTRPBF
Manufacturer Part Number
IRF7705GTRPBF
Description
MOSFET P-CH 30V 8A 8-TSSOP
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7705GTRPBF.pdf
(8 pages)
Specifications of IRF7705GTRPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
88nC @ 10V
Input Capacitance (ciss) @ Vds
2774pF @ 25V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Transistor Polarity
P Channel
Continuous Drain Current Id
-8A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
18mohm
Rds(on) Test Voltage Vgs
-10V
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
30 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 8 A
Power Dissipation
1.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
58 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7705GTRPBFTR
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
Notes:
I
I
V
t
Q
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
R
I
SM
S
rr
d(on)
r
d(off)
f
DSS
I
fs
(BR)DSS
GS(th)
GSS
SD
iss
oss
rss
rr
g
gs
gd
DS(on)
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤
(BR)DSS
max. junction temperature.
2
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
When mounted on 1 inch square copper board, t<10 sec
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 2774 –––
–––
–––
–––
––– 0.015 –––
–––
-30
13
–––
–––
–––
–––
–––
–––
–––
270
418
270
––– -100
128
9.0
36
34
58
10
18
35
-1.2
–––
-2.5
–––
100
–––
–––
405
190
–––
–––
-15
-25
-1.5
-30
54
50
18
30
88
27
53
V/°C
mΩ
nC
µA
nA
nC
ns
pF
ns
V
V
V
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
D
G
= -8.0A
= -1.0A
= 25°C, I
= 25°C, I
= 15Ω
= 6.0Ω
= 0V, I
= -10V, I
= -4.5V, I
= V
= -10V, I
= -24V, V
= -24V, V
= -20V
= 20V
= -15V
= -10V
= 0V
= -25V
= -15V, V
GS
Conditions
, I
D
S
F
D
Conditions
D
= -250µA
D
= -1.5A, V
= -1.5A
D
GS
GS
GS
= -250µA
= -8.0A
= -8.0A
= -6.0A
= 0V
= 0V, T
= -10V
D
www.irf.com
= -1mA
GS
J
= 70°C
G
= 0V
D
S