IRFZ44ES International Rectifier, IRFZ44ES Datasheet
IRFZ44ES
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IRFZ44ES Summary of contents
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... Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
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... IRFZ44ES/L Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient DV /DT (BR)DSS J R Static Drain-to-Source On-Resistance ––– DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... GS Fig 3. Typical Transfer Characteristics www.irf.com 4.5V 20µs PULSE WIDTH ° 100 ° ° 175 25V DS 20µs PULSE WIDTH IRFZ44ES/L 1000 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 10 20µs PULSE WIDTH T = 175 0 Drain-to-Source Voltage (V) DS Fig 2 ...
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... IRFZ44ES/L 2500 iss rss 2000 oss ds C iss 1500 C oss 1000 C rss 500 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 ° 175 ° 0.5 1.0 1.5 V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Fig 7. Typical Source-Drain Diode ...
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... RESPONSE) 0.01 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 125 150 175 125 150 175 ° ° 0.001 t , Rectangular Pulse Duration (sec) 1 IRFZ44ES D.U.T. D.U. 10V 10V Pulse Width Pulse Width µ ...
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... IRFZ44ES 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 6 500 400 300 + - 200 100 Fig 12c. Maximum Avalanche Energy Fig 13b. Gate Charge Test Circuit TOP BOTTOM 50 75 100 125 ...
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... Low Leakage Inductance Current Transformer - dv/dt controlled by R Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test Period Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% Fig 14. For N-Channel HEXFETS IRFZ44ES P. Period V =10V * ...
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... IRFZ44ES Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055 1.78 (.070) 1.27 (.050 1.40 (.055) 3X 1.14 (.045) 3X 5.08 (.200 & 14.5M , 1982 LLIN & Part Marking Information 2 D Pak TIF 4.69 (.185) 4.20 (.165) 15.4 9 (.610) 14.7 3 (.580) 5.28 (.208) 4 ...
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... Package Outline TO-262 Outline Part Marking Information TO-262 www.irf.com IRFZ44ES/L 9 ...
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... IRFZ44ES/L Tape & Reel Information 2 D Pak TIO 330.00 (14.173 - LIN ILL WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR FAR EAST: K& ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...