IRFZ44ES International Rectifier, IRFZ44ES Datasheet - Page 2

• Manufacturer Part Number: IRFZ44ES
• Description: MOSFET N-CH 60V 48A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ44ES

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 29A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1360pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFZ44ES

Electrical Characteristics @ T
IRFZ44ES/L
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
Source-Drain Ratings and Characteristics
Notes:
I
L
I
I
I
V
t
Q
t
V
DV
R
V
g
DSS
GSS
Q
Q
Q
t
t
t
t
C
C
C
S
on
SM
rr
d(on)
d(off)
f
S
r
For recommended soldering techniques refer to application note #AN-994.
fs
SD
2
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
rr
Repetitive rating; pulse width limited by
g
gs
gd
max. junction temperature. ( See fig. 11 )
R
I
T
(BR)DSS
Starting T
SD
J
G
= 25 , I
175°C
29A, di/dt
/DT
J
J
Drain-to-Source Leakage Current
Internal Source Inductance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance –––
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
= 25°C, L = 520µH
AS
= 29A. (See Figure 12)
320A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
Pulse width
Uses IRFZ44E data and test conditions
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
–––
–––
–––
–––
–––
60
15
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.063 –––
1360 –––
–––
177
–––
–––
–––
–––
–––
–––
–––
–––
–––
420
160
––– 0.023
–––
––– -100
–––
7.5
69
12
60
70
70
104
266
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
1.3
4.0
300µs; duty cycle
192
25
60
13
23
48
V/°C
nH
ns
nC
nC
ns
µA
nA
pF
A
V
V
V
S
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
integral reverse
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 29A
= 29A
= 25°C, I
= 25°C, I
= 15
= 1.1 , See Fig. 10
= V
= 30V, I
= 60V, V
= 48V, V
= 20V
= 48V
= 0V
= 25V
= 0V, I
= 10V, I
= -20V
= 10V, See Fig. 6 and 13
= 30V
2%.
GS
, I
D
S
F
D
D
D
= 250µA
GS
GS
Conditions
= 29A, V
= 29A
Conditions
= 250µA
= 29A
= 29A
= 0V
= 0V, T
D
GS
= 1mA
J
www.irf.com
= 150°C
= 0V
G
S
+L
D
D
S
)